Cmos Vlsi Vtu Notes Cbcs

Apr 5, 2018 - 6th Semester BE (CBCS) EC/TC Model Question Papers 15EC61 Visvesvaraya. 6 Note: In the updated syllabus 'Bus Interface' topic in Module-2 has been replaced with. B.E (CBCS) ECE Course: 15EC63- VLSI DESIGN Time: 3 Hours Max. 6 b Draw the circuit and stick diagram for nMOS and CMOS. M.Tech in VLSI DESIGN AND EMBEDDED SYSTEMS I SEMESTER Sl. No Subject Code Title Dura. 16EVE421 CMOS RF Circuit Design 16 ECS422 Advances in Image Processing. (CBCS) scheme] SEMESTER – I Subject Code 16ELD11 IA Marks 20 Number of Lecture Hours/Week.

Vlsi design notes(1st unit) according to vtu syllabus.(BE) • 1. 1 VLSI Design UNIT -1 Introduction to MOS technology  Moore’s law  Speed- power performance  nMos fabrication  CMOS fabrication  n-well process  p-well process  BiCMOS  Comparison of bipolar and CMOS • 2 1 INTRODUCTION  Integrated circuit (IC):- an IC is a combination of interconnection circuit elements on a continuous substrate.  Substrate:- substrate is a supporting material upon which an IC is fabricated.  Wafer:- a wafer is a basic physical unit used in processing. It usually contains large number of identical IC’s.  Transistor was invented in 1947.  The very first IC emerged at the beginning of 1960.

VLSI design Book Latest Material Links Unit 1 Link – Unit 2 Link – Unit 3 Link – Unit 2 Notes(Will be updated soon) Unit 4 Link – Unit 5 Link – Unit 6 Link – Old Material Links UNIT I INTRODUCTION Introduction to IC Technology – MOS, PMOS, NMOS, CMOS & BiCMOS,technologies- Oxidation, Lithography, Diffusion, Ion implantation, Metallisation, Encapsulation, Probe testing, Integrated Resistors and Capacitors,CMOS nanotechnology. Vlsi_lec-design VLSI-lec-1 UNIT II BASIC ELECTRICAL PROPERTIES Basic Electrical Properties of MOS and BiCMOS Circuits: Ids-Vds relationships, MOS transistor threshold Voltage, gm, gds, the figure of merit Co; Pass transistor, NMOS Inverter, Various pull-ups, CMOS Inverter analysis, and design, Bi-CMOS Inverters.

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